CuriousMarc Time Travelling 8080 Microprocessor Development

He found a 32kB static non-volatile memory and he plans to use it to run Microsoft BASIC which he says is an awesome piece of assembly language programming! See CuriousMarc- The MMD-1 Micro Designer Restoration Part 4.

That memory is interesting. See Static FRAM: an emerging nonvolatile memory technology

Nondestructively read ferroelectric memories can be achieved using the ferroelectric material as the FET gate oxide. CMOS FETs with ferroelectric gate oxides are very difficult to build but ferroelectric gate TFTs have a robust process that differs from that of the ferroelectric capacitor by only one mask layer. The static FRAM (SFRAM) is one such device. It consists of a Pt-PZT capacitor where the top Pt electrode is replaced by a semiconducting oxide. The ferroelectric material polarization state modulates the semiconducting electrode conductivity. The magnitude of the conductivity change can be process controlled to range from 3:1 to 300:1 depending on the product requirements. Current sensing amplifiers can detect the transistor state in as little as 15 ns. Combining one CMOS transistor as the pass gate with each SFRAM transistor, large nonvolatile memory arrays can be built with 40 /spl mu/m/sup 2/ cell sizes, <100 ns cycle times, and using simple SRAM asynchronous three line control

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TubeTime did a video about the 6502 chip:

See Parasitic Capacitance in MOS Transistors. It’s not a conspiracy, it’s just coincidence. See Physicists Reproducing Experiments.

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